R&D “Zero Defect” semiconductor material LED luminous efficiency increased by 100 times

For a long time, the thinner the semiconductor material, the more adversely affect the performance of electronic and optoelectronic components. However, the multinational team of National Taiwan University has developed a globally-oriented zero-defect semiconductor material that will enhance LED illumination through the “repair defect” method. 100 times more effective, has been published in the journal Science.

The study was conducted by Ali Javey, a professor at the University of California, Berkeley, He Zhihao, a professor at the King Abdullah University of Science and Technology, Li Lan, the president of the front desk, and Lian Dexuan, a doctor at the University of Taiwan. The two-dimensional materials were immersed in organic superacids. It can make the single-layer film reach “zero defect” and greatly improve the luminous efficiency.

The R&D team at National Taiwan University explained that two-dimensional semiconductor materials have special electronic conduction, optical and mechanical properties that can be integrated into today's semiconductor component manufacturing processes and are considered to have great potential to replace traditional coffin components, including molybdenum disulfide (MoS2). It is one of the most popular semiconductor two-dimensional materials, but with the current synthetic preparation technology, the defect density of two-dimensional materials is still high.

After long-term research, the multinational research team found that the molybdenum disulfide (MoS2) material is infiltrated into the organic super acid of the bistriflimide, which can greatly improve the quantum efficiency of the two-dimensional material, which can be increased from less than 1% to nearly 100%. , bringing revolutionary changes to the transistor.

This technology is expected to be used in the future to develop transparent LED displays, ultra-efficient solar cells, high-sensitivity photodetectors, and low-power nano-scale transistors.

The first author of this study, Lian Dexuan, is a young Ph.D. student who has cultivated in Taiwan. He received the IEEE Scholarship from the International Institute of Electronics and Semiconductors for the first time this year. He just completed his doctoral oral exam, and he is about to graduate this semester. It was also the first paper published by the National Taiwan University to be selected at the VLSI technology conference. It was selected as the focus article and was reported by 30 international media.

Lian Dexuan has been implementing the gantry program for the second year of the Ministry of Science and Technology at the University of California, Berkeley, and will continue to serve as a postdoctoral researcher at the University of California at Berkeley.

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