With Moore's Law approaching its limit, traditional transistor devices have entered a development bottleneck. How to use new principles, new structures and new materials to solve and optimize the problems of size reduction and energy consumption in traditional semiconductor devices is the development focus of semiconductor technology in the post-Moore era. The research team of Wang Xiaomu and Shi Yi of the School of Electronic Engineering of Nanjing University cooperated with the Xu Yang research team of Zhejiang University and the Beijing Computational Science Research Center to develop a complete information processing system that realizes the generation, transmission, detection and regulation of the energy valley spin current at room temperature. The results of functional solid-state quantum devices were recently published in the journal Nature Nanotechnology.
Modern semiconductor devices mainly rely on electric charge to realize the expression, storage, transmission and processing of information. On this basis, the transistor is used as the basic unit to control the flow of charge to complete information processing and calculation functions. The research team proposed and realized a novel device of "energy valley spin" transistor. The device uses energy-spinning degrees of freedom instead of charge as the carrier of information encoding, and the operation and transmission of data in the energy-spinning device does not involve charge flow, which is expected to realize ultra-low power consumption functional devices.
"Energy valley" refers to the extreme point in the energy-momentum dispersion relationship of semiconductor materials. Although people realized early on that the energy valley spin can express information like the degree of freedom such as charge or spin, but it is difficult to manipulate through external fields. At present, it is impossible to make transistors and other devices with energy valley spin. The team used the optical chirality in asymmetric plasmon nanoantennas to realize the controllable interaction between the electromagnetic field and the energy valley spins in transition metal chalcogenides, combined with the chiral Berry curvature in the material, to achieve it at the device level The generation, transmission, detection and switching operation of valley information. This energy valley spin transistor optimizes and improves the energy valley information injection, transmission and detection process, so that the energy valley information flow can be transmitted and regulated independently of the charge flow under zero bias voltage. And the device unit is expected to be integrated into an ultra-low power valley electronic circuit with specific logic functions through a structure similar to a CMOS circuit.
The important significance of this research is that a basic unit device of energy valley spin that works at room temperature is proposed for the first time, which lays the foundation for the development of new valley information devices in the post-Moore era and demonstrates the application of energy valley information devices to future integrated circuits. Possible. (Intern Ji Tianyu, reporter Zhang Ye)
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